Mrf454 transistor pinout cross reference. It crosses to an NTE199 with an ECB pinout.

Mrf454 transistor pinout cross reference BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter 2N3904 Datasheet, Equivalent, Cross Reference Search Type Designator: 2N3904 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. IRFP450 Transistor Equivalent Substitute - MOSFET Cross-Reference Search . BUY TRANSISTORS . ,LTD 2SC3320 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED SWITCHING FEATURES * High voltage, high speed switching * High reliability ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC3320L-x-T3P-T 2SC3320L-x-T3P-T TO-3P B C E Tube2SC3320L-x-T3N-T 2SC3320L-x-T3N-T TO-3PN B C E T JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO. As complementary types the NPN transistors 2N5550 and 2N5551 are recommended. 36 0. 70B 4. Discover the different types of transistors and easily select the correct one for your application. MRF433 Datasheet, Equivalent, Cross Reference Search Type Designator: MRF433 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 20 W Maximum Collector-Base Voltage |Vcb|: 36 V Maximum Collector-Emitter Voltage |Vce|: 18 V Maximum Emitter-Base Voltage |Veb|: 4 V Maximum Collector Current |Ic max|: 2. 0VCBO 180 V ICBO VCB=180V 100max AVCEO 180 V IEBO VEB=6 D882NPN Transistors Features3 NPN transistor High current output up to 3A2 Low Saturation Voltage Complement to 2SB772 1. 07 80W, 30MHz, 12. BC546A/B/C - BC550A/B/C Taiwan Semiconductor 500mW, NPN Small Signal Transistor FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement VCBO 30-80 V High surge current capability VCEO 30-65 V Compliant to RoHS directive 2011/65/EU and VEBO 6 V in accordance to WEEE 2002/96/EC Halogen-free accordi GT322B Datasheet, Equivalent, Cross Reference Search Type Designator: GT322B Material of Transistor: Ge Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. BASEMedium Power Complementary Silicon Transistors MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter TIP120 TIP121 . Operating Junction Temperature (Tj): 175 °C 2SC2078 Transistor Datasheet pdf, 2SC2078 Equivalent. V1 MRF454 2 M/A-COM Technology Solutions Inc. Today I will introduce 2SC1815 to you. Base12. Size:349K toshiba 2sc2670. 00 + 0. RF Transistor NPN 25V 20A 80W Chassis Mount 211-11, Style 2. ) Complementary to 2SA1020 3. TRANSISTORS 10 TRANSISTORS: Cross Reference, Beta Coding & Matching Motorola Beta Coding MOTOROLA uses two methods to designate d. 210. EMITTER Amplifier applications As complementary type, the NPN transistor 2N3904 is 2. RCA410 Datasheet, Equivalent, Cross Reference Search Type Designator: RCA410 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 125 W Maximum Collector-Base Voltage |Vcb|: 200 V Maximum Collector-Emitter Voltage |Vce|: 200 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 7 A Max. COLLECTOR Complement to BC546,BC547,BC548 2. BC547 transistor has a gain value of 110 to 800, this value determines the amplification capacity of the transistor. (800) 346-6873 Contact Mouser (USA) (800) 346-6873 | Feedback Equivalência de transistores, circuitos integrados, diodos MRF454. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. 27MAXIMUM RATINGS (Ta=25 unless otherwise noted) G 0. It is intended for power switching circuits,series and shunt regulators, output stages and high fidelityamplifiers. Size:207K fairchild semi S9014 Datasheet, Equivalent, Cross Reference Search Type Designator: S9014 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain. 55 MAXE 1. , LTD TO-126 Plastic-Encapsulate Transistors TIP120,121,122 Darlington Transistor (NPN) TO-126 TIP125,126,127 Darlington Transistor (PNP) 1. S8550 Datasheet (PDF) PNP General Purpose Transistors Transistor pinout: BEC UNISONIC TECHNOLOGIES CO. 5V Designed for power amplifier applications in industrial, commercial and Product Image amateur radio equipment to 30 MHz. 3 W Maximum Collector-Base Voltage |Vcb|: 40 V Maximum Collector-Emitter Voltage |Vce|: 40 V Maximum Emitter-Base Voltage |Veb|: 4 V Maximum Collector Current |Ic max|: 0. 1TO-3 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free 2SA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. Collector3. 8 W Maximum Collector-Base Voltage |Vcb|: 150 V Maximum Collector-Emitter Voltage |Vce|: 150 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 0. UNISONIC TECHNOLOGIES CO. 5Volt Gain 12dB datasheet, inventory, & pricing. 5 A Max. 51CLASSIFICAT UNISONIC TECHNOLOGIES CO. 2SC374, Tube 2SC374; Röhre 2SC374 ID49415, Transistor | Radiomuseum. 05 W Maximum Collector-Base Voltage |Vcb|: 25 V Maximum Collector-Emitter Voltage |Vce|: 25 V Maximum Collector Current |Ic max|: 0. 9014 Transistor Equivalent Substitute - Cross-Reference Search . Size:189K inchange semiconductor 2sc867. It was marketed as a general-purpose transistor with a high gain (250 to 1000). SS8550 Datasheet (PDF) PNP General Purpose Transistors Transistor pinout: BEC BC148C Datasheet, Equivalent, Cross Reference Search Type Designator: BC148C Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. pdf isc Silicon NPN Power Transistor 2SC867DESCRIPTIONWith TO-66 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in line-operated color TV chromaoutput circuits and sound output circuits. SS8550 Transistor Equivalent Substitute - Cross-Reference Search . The maximum amount of current that could flow through the Collector pin is 100mA AC 127 npn-Transistor legierter npn-Germanium-Transistor Der Transistor AC 127 ist fr die Verwendung als NF-Verstrker geeignet. ) Generally speaking, RF power gain (Pg) and Maximum Saturated Jan 5, 2025 · MRF454 MACOM RF Bipolar Transistors 2-30MHz 80Watts 12. The KSC1845 previously suggested is perfect too. 00F 1. 2N5087 Datasheet, Equivalent, Cross Reference Search Type Designator: 2N5087 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. Sep 18, 2021 · Hello everyone, I am Rose. 52. 1. 2SA733 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. On special request, these transistors can be 1. QUICK REFERENCE . 7 W Maximum Collector-Base Voltage |Vcb|: 200 V Maximum Collector-Emitter Voltage |Vce|: 200 V Maximum Emitter-Base Voltage |Veb|: 4 V Maximum Collector Current |Ic max|: 0. 0. MRF455 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 2 A Max. pdf 2SA1492Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3856)Application : Audio and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions Ratings Unit0. pdf 5401MOTPNP-TRANSISTOR PNP PNP High Voltage Transistor SMD 5401PNP, BEC Complementary to 5401General Purpose Transistors Transistor Polarity: PNP Transistor pinout: BEC SOT-23 Package Marking Code: 2L hFE: 100~200, 200~300 Ldeal for Medium Power Amplification and Switching 5401In 2SC2259 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SC2259 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. com Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION With TO-66 package Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig. 25 W Maximum Collector-Base Voltage |Vcb|: 40 V Maximum Collector-Emitter Voltage |Vce|: 20 V Maximum Emitter-Base Voltage |Veb|: 4 V Maximum Collector Current |Ic max|: 0. Nov 26, 2021 · Manufacturer’s catalogs and cross-reference guides If you’re old school or OCD, like me, you may have some vintage, printed softbound books that are manufacturer’s catalogs listing their transistor back in the day or cross references that show which transistors can be substituted for which models. , LTD 2N3772 SILICON NPN TRANSISTOR SILICON NPN TRANSISTORS DESCRIPTION The UTC 2N3772 is a silicon power transistor in TO-3 metal case. onsemi. APPLICATIONSDesigned for medium power amplifier applications. 0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) = 7. Brief Description on BC547. cross-reference search | Equivalent transistors. 70C 12. mrf454. This article mainly covers its datasheet, pinout, equivalent, uses and more details about C2655. , Ltd TO-92 Plastic-Encapsulate Transistors 2N3906 TRANSISTOR (PNP) TO-92 FEATURE PNP silicon epitaxial planar transistor for switching and 1. 70 MAXEB 4. Bipolar Transistor Cross-Reference Search. 25 W Maximum Collector-Base Voltage |Vcb|: 30 V Maximum Collector-Emitter Voltage |Vce|: 20 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 0. 4 MHz BC327 / BC328 PNP Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation 1Collector 111J2Base 222CLASSIFICATION OF hFE (1) 3A D 3Emitter 33Product-Rank BC327-16 BC327-25 BC327-40 BMillimeter REF. Page: 4 Pages. Attention must be paid to how the transistor is being used and it’s requirements in the circuit. Operating Junction Temperature (Tj): 80 °C JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO. . Jun 4, 2020 · The MRF454 from M/A-COM/MOTOROLA manufacturer is a Module with RF POWER TRANSISTOR NPN SILICON. BUY Mar 30, 2021 · BC547 Equivalent Transistors. NPNS9014Transistor pinout 2SC2579 Transistor Datasheet pdf, 2SC2579 Equivalent. Visit www. This article mainly introduces pinout, equivalents, datasheet, and other detailed information about Central Semiconductor 2SC1815. 21N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search . EMITTER TO-92S 2. Decoding the Semiconductor Maze: A Comprehensive Guide to Transistor Cross-Reference Tools For electronics enthusiasts, hobbyists, and professionals alike, the world of transistors can feel like a labyrinth. BASE Recommended This transistor is also available in the SOT-23 case with 3. Size:194K inchange semiconductor 2sa700. Most data for our base were taken directly from IC manufacturers. Size:439K utc 2sd669 2sd669a. 1mA)/ hFE2 (1mA) Complementary to 2SA1175 PNP transistor MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Value UnitsParameter VCBO 60 VCollector-Base Voltage VCEO Collector-Emitter Voltage 50 V VEBO AC187 Transistor Datasheet pdf, AC187 Equivalent. 0s(TYP) 1*C 2N3563 Datasheet, Equivalent, Cross Reference Search Type Designator: 2N3563 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. pdf 2SA1941 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = -140 V (min) Complementary to 2SC5198 Recommended for 70-W high-fidelity audio frequency amplifier output stage. 50Symbol Parameter Value UnitsL 2. MRF947T1 Transistor Datasheet pdf, MRF947T1 Equivalent. Die Anschlsse sind vom Gehuse elektrisch isoliert Datasheet: AC123 , AC123GN , AC123Y , AC124 , AC124R , AC125 , AC125R , AC126 , 2SC5200 , AC127-01 , AC127Z , AC128 , AC128-01 , AC128K , AC129 , AC129BK , AC129BL . A 4. to-220 7812 70407812 +12v reg. ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV 2SA1145 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SA1145 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. Collector 3. c. EMITTER FEATURES 2. 2A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 - MJE13001G-x-AB3-A-R SOT-89 E C B Tape Reel- MJE13001G-x-AB3-F-R SOT-89 B C E Dec 17, 2024 · The 2SC374 is a vintage Japanese transistor. •Specified 12. MRF472 Datasheet, Equivalent, Cross Reference Search Type Designator: MRF472 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 10 W Maximum Collector-Base Voltage |Vcb|: 65 V Maximum Collector-Emitter Voltage |Vce|: 30 V Maximum Emitter-Base Voltage |Veb|: 3 V Maximum Collector Current |Ic max|: 1 A Max. 2 W Maximum Collector-Base Voltage |Vcb|: 40 V Maximum Collector-Emitter Voltage |Vce|: 30 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 0. 92 TYP hFE1 (0. MRF454 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 75W @ Tamb=25 Collector Current: ICM=5APlastic-Encapsulate Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Transistors Marking: D965T/R isc Silicon NPN Power Transistor MJ15015DESCRIPTIONExcellent Safe Operating AreaDC Current Gain-: h = 20-70@I = 4A,V = 4VFE C CECollector-Emitter Saturation Voltage-: V )= 1. J310 Datasheet (PDF) . Emitter Simplified outline(SOT-89)Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to Base Voltage VCBO 40 VCollector to Emitter Voltage VCEO 30 VEmitter to Base Voltage VEBO 6 VCollector Semiconductor (Transistor, diode, IC) Cross reference. COLLECTOR High Speed Switching Time: tstg=1s(Typ. Min. 05 A Max. 5dB (max) (f = 1 MHz) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 35 VCollector-emitter v 2N2924 Datasheet, Equivalent, Cross Reference Search Type Designator: 2N2924 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. I don't know why they called the 2SC458 a low noise transistor since the noise contour map of the 2SC458 shows that it is much noisier than many transistors. 3SK45 Transistor Equivalent Substitute - MOSFET Cross-Reference Search . 20. TO-3ABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified )PARAMETERS SYMBOL VALUE UNITSCollector-Base 9011 Datasheet, Equivalent, Cross Reference Search Type Designator: 9011 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. 415. Description: The RF Line NPN Silicon Power Transistor 80W, 30MHz, 12. This RF transistor is designed for low noise amplifier applications. First, we 9. 5 Volt, 30 MHz Characteristics Output Power = 80 Watts Minimum Gain 12 dB Efficiency = 50% MAXIMUM RATINGS. Manufacturer: M/A-COM Technology Solutions, Inc. 1TO-3 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free 2SC627 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SC627 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. 5 W Maximum Collector-Base Voltage |Vcb|: 50 V Maximum Collector-Emitter Voltage |Vce|: 45 V Maximum Collector Current |Ic max|: 0. 36 W Maximum Collector-Base Voltage |Vcb|: 25 V Maximum Collector-Emitter Voltage |Vce|: 25 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 0. 31 W Maximum Collector-Base Voltage |Vcb|: 40 V Maximum Collector-Emitter Voltage |Vce|: 40 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 0. The RF Line NPN Silicon Power Transistor 80W, 30MHz, 12. COLLECTOR 3. Please note. The transistor is subdivided into one group according to its DC current gain. 1c0. As complementary type the PNP transistor 2SA1015 is recommended. Jan 3, 2025 · Also, I would have to look at my old cross reference guide for ECG/NTE parts but as I recall GE, Sylvania and Zenith had a common prefix for there parts. 5V(Max)(IC=1A) 2. 81E 0. pdf UNISONIC TECHNOLOGIES CO. 30F FVCBO Collector-Base Voltage 30 V M 0. Max. File Size: 120Kbytes. 3. Elenca circa 5000 tipi di transistori dei principali produttori europei e americani dell'epoca, con l'indicazione degli eventuali equivalenti asiatici. The cross reference provides alternatives for locating replacement components for Heathkit products. The RF Line. As complementary type the NPN transistor 2SC1815 is recommended. 2SC2579 Datasheet (PDF . 2 W Maximum Collector-Base Voltage |Vcb|: 50 V Maximum Collector-Emitter Voltage |Vce|: 45 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 0. 51 MAXVCEO Collector-Emitter V This downloadable reference guide features the classifications, circuit symbols, applications, and terms necessary to understand the basics of transistors. M/A-COM Technology Solu Part #: MRF454. pdf MOT 5551NPN-TRANSISTORNPN NPN High Voltage Transistor SMD 5551 NPN, BEC Complementary to5551 General Purpose Transistors Transistor Polarity: NPN Transistor pinout: BEC SOT-23 Package Marking Code: G1 hFE: 100~200, 200~300 Ldeal for Medium Power Amplification and Switching Inner 21N06 Transistor Datasheet, 21N06 Equivalent, PDF Data Sheets. , LTD TO-92 Plastic-Encapsulate Transistors TO 92 D965V TRANSISTOR (NPN) 1. BASE 1 2 3 Features High voltage VCEO:50V Excellent hFE Linearity:0. The 2SC1815 is a 50V 150mA general purpose NPN low-power silicon transistor with a maximum gain value of 700. Also, for all transistors incorrect pin out placement is a very common problem. 1 m @ VGS = 4. Diss. MRF454 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. Feb 5, 2020 · Transistor cross reference with pinout. Product-Rank BC328-16 B 2N4403 Datasheet, Equivalent, Cross Reference Search Type Designator: 2N4403 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. 70 MAXDD 0. Operating Junction Temperature (Tj): 60 °C Transition Frequency (ft): 0. It crosses to an NTE199 with an ECB pinout. Ask Question Asked 4 years, 11 months ago. Size:494K lge 2sc2785. 01 A Max. , LTD TO-92 Plastic-Encapsulate Transistors TO 92 BC556/BC557/BC558 TRANSISTOR (PNP) FEATURES High Voltage1. BC207 Datasheet, Equivalent, Cross Reference Search Type Designator: BC207 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. 6 A Max. File Size: 57Kbytes. It lists over 150 part numbers, their corresponding generic numbers, wattage ratings, and brief descriptions. Equiv. Size:157K toshiba 2sa1941r 2sa1941o. 3SK45 Transistor Datasheet, 3SK45 Equivalent, PDF Data Sheets. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V Jan 1, 2010 · Don't worry, virtually every transistors are better than the 2SC458. 30 3. Product Specification www. BASE General Purpose Switching and Amplification. TIP50 Datasheet, Equivalent, Cross Reference Search Type Designator: TIP50 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 40 W Maximum Collector-Base Voltage |Vcb|: 500 V Maximum Collector-Emitter Voltage |Vce|: 400 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 1 A Max. Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. 5 W Maximum Collector-Base Voltage |Vcb|: 120 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 0. Min. Base 3. 9. BUY TRANSISTORS. Emitter 2. MRF947T1 Transistor Equivalent Substitute - Cross-Reference Search . 2SC2579 Transistor Equivalent Substitute - Cross-Reference Search . 2 W Maximum Collector-Base Voltage |Vcb|: 30 V Maximum Collector-Emitter Voltage |Vce|: 12 V Maximum Emitter-Base Voltage |Veb|: 4 V Maximum Collector Current |Ic max|: 0. Transistor Database. SS8050 Datasheet (PDF) NPN General Purpose Transistors Transistor pinout: BEC 2N551 Transistor Datasheet pdf, 2N551 Equivalent. Apr 14, 2022 · NPN 150°C TJ 1μA ICBO TO-226-3, TO-92-3 Long Body Bulk Through Hole . 5Volt Gain 12dB. Size:1857K cn mot 5551. 80. page 4 original in-house number alternate in-house number field replacement number order number notes 7810 70407810 +10v reg. 56F 0. 8 V Zener 56-7 1N2326 1. 5 Volt, 30 MHz Characteristics — Output Power = 80 Watts Minimum Gain = 12 dB Efficiency = 50% MAXIMUM RATINGS. pdf. Parameters and Characteristics 2N551 Transistor Equivalent Substitute - Cross-Reference Search . 5ACCollector-Emitter Breakdown Voltage-: V = -35V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation. 1 V(Max)@ I = 4ACE(sat CComplement to the PNP MJ15016Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power SEMICONDUCTORMPSA13TECHNICAL DATAMPSA13 TRANSISTOR (NPN) B CFEATURES Darlington Transistors DIM MILLIMETERSA 4. EMITTER 2. This RF transistor is AEC-Q101 qualified and PPAP capable for12 V WeEn Semiconductors Product data sheet Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTIONThe PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in highfrequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,etc. 1 simplified outline (TO-3PN) and symbol 3 EmitterAbs SS8050 Transistor Equivalent Substitute - Cross-Reference Search . 2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig. Id Max. 3 W Maximum Collector-Base Voltage |Vcb|: 40 V Maximum Collector-Emitter Voltage |Vce|: 25 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 0. Exports to OrCAD, Allegro, Altium, PADS, Eagle, KiCad, Diptrace & Pulsonix. 31 W Maximum Collector-Base Voltage |Vcb|: 20 V Maximum Collector-Emitter Voltage |Vce|: 18 V Maximum Emitter-Base Voltage |Veb|: 3 V Maximum Collector Current |Ic max|: 0. Cross Reference Search. BUY TRANSISTORS 9. Description: RF POWER TRANSISTOR NPN SILICON. pdf JMnic Product Specification Silicon NPN Power Transistors 2SC2580 DESCRIPTION With TO-3PN package Complement to type 2SA1105 High power dissipation High current capability APPLICATIONS Audio power amplifier DC-DC converter PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig. Size:373K 1 me4953. BC549, BC636, BC639, 2N2222 TO-92, 2N2222 TO-18, 2N2369, 2N3055, 2N3904, 2N3906, 2SC5200 . For example, just because it was an EBC pin out on the vintage transistor, the sub may be different. The guide can also be printed out as a poster! Simply complete the form to download it now. , LTD TO-92 Plastic-Encapsulate Transistors TO 92 MPSA56 TRANSISTOR (PNP) 1. COLLECTOR General Purpose Switching and Amplification. 6 2. FET Transistor cross reference chart Transistor Type Max. 1. Parameters and Characteristics 40872 Transistor Equivalent Substitute - Cross-Reference Search . org. 4 W Maximum Collector-Base Voltage |Vcb|: 100 V Maximum Collector-Emitter Voltage |Vce|: 100 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 0. Vds Max. A page which shows a cross reference chart for FET type transtors. The MRF454 is RF Transistor NPN 25V 20A 80W Chassis Mount 211-11, Style 2 RF Bipolar Transistors 2-30MHz 80Watts 12. 2N5400 / 2N5401 PNP Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. 625 W Maximum Collector-Base Voltage |Vcb|: 300 V Maximum Collector-Emitter Voltage |Vce|: 300 V Maximum Emitter-Base Voltage |Veb|: 6 V Maximum Collector Current |Ic max|: 0. Viewed 200 times 3 \$\begingroup\$ I need to find mrf454. 0 V 100mA Germanium V-Ref 56-8 ED-5 Erie Crystal Diode 56-9 1N294 Crystal Diode 56-10 G247 47pF Varactor 56-11 1N60A Crystal S9013 Datasheet, Equivalent, Cross Reference Search Type Designator: S9013 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. 1 simplified ECG152 Transistor Datasheet pdf, ECG152 Equivalent. 5610 Datasheet, Equivalent, Cross Reference Search Type Designator: 5610 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. , LTD 8N65K-MTQ Power MOSFET 8A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N65K-MTQ is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state 2SC536 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SC536 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. Material = Struct = Pc > W Vcb > V MRF454 Si NPN 250 45 20 4 20 175 20 M174 : About 1 results. 2. There are 2 cross reference alternative products totally about MRF454 : 2 Possible Analogue , Replacement Manufacturers include : ASIX Cross Reference STMicroelectronics Cross Reference 2N554 Transistor Datasheet pdf, 2N554 Equivalent. 31 W Maximum Collector-Base Voltage |Vcb|: 60 V Maximum Collector-Emitter Voltage |Vce|: 40 V Maximum Emitter-Base Voltage |Veb|: 6 V Maximum Collector Current |Ic max|: 0. Manufacturer: Motorola, Inc. Recommend a BC547C variant. Freq 40872 Transistor Datasheet pdf, 40872 Equivalent. 05 W Maximum Collector-Base Voltage |Vcb|: 12 V Maximum Collector Current |Ic max|: 0. 5V trench technology. BC551 Datasheet, Equivalent, Cross Reference Search Type Designator: BC551 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. 5 V power supplies. As complementary type the NPN transistor ST 2N2222 and ST 2N2222A are recommended. Size:146K jmnic 2sc2580. Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR EPITAXIAL TRANSISTORS BC635, 637, 639 NPNBC636, 638, 640 PNPTO-92Plastic PackageFor Lead Free Parts, Device Part # will be Prefixed with "T"BCEHigh Current TransistorABSOLUTE MAXIMUM RATINGS (Ta=25C)BC635 BC637 BC639DESCRIPTION SYMBOLBC636 MRF454 80 W, 30 Mhz, RF Power Transistor NPN Silicon . pdf isc Silicon PNP Power Transistor 2SA700DESCRIPTIONHigh Collector Current -I = -1. 8 A Max. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. 3 W Maximum Collector-Base Voltage |Vcb|: 45 V Maximum Collector-Emitter Voltage |Vce|: 45 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 0. Part #: MRF454. pdf MCCMicro Commercial ComponentsTMD965-T20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311D965-RPhone: (818) 701-4933Fax: (818) 701-4939FeaturesNPN Power Dissipation: PCM=0. JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO. 2SC1845 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SC1845 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. This device is designed to lower noise figure in the region of low signal source impedance, and to lower the pulse noise. , LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR FEATURES * Collector-base voltage: V(BR)CBO=600V * Collector current: IC=0. Size:202K utc 8n65kl-ta3-t 8n65kg-ta3-t 8n65kl-tf3-t 8n65kg-tf3-t 8n65kl-tf1-t 8n65kg-tf1-t 8n65kl-tf2-t 8n65kg-tf2-t. , LTD MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 45_HJ 14. 2SC2078 Transistor Equivalent Substitute - Cross-Reference Search . 2SC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. 30 4. 025 A Max. On special request, these transistors can be manufactured in different pin Jan 17, 2020 · "Transistor Cross-Reference Guide", supplemento alla rivista "Selezione di tecnica radio TV hifi elettronica" n° 4, 1980. pdf 2SC2785 TO-92S Transistor (NPN) 1. 2N107 Datasheet, Equivalent, Cross Reference Search Type Designator: 2N107 Material of Transistor: Ge Polarity: PNP Maximum Collector Power Dissipation (Pc): 0. MPSA42 Datasheet, Equivalent, Cross Reference Search Type Designator: MPSA42 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. As complementary type the NPN transistor 2SC945 is recommended. 31 W Maximum Collector-Base Voltage |Vcb|: 50 V Maximum Collector-Emitter Voltage |Vce|: 50 V Maximum Emitter-Base Voltage |Veb|: 3 V Maximum Collector Current |Ic max|: 0. NTE Cross Reference Guide Enter the Manufacturer Part Number of your Semiconductors into the form below to locate a compatible NTE replacement. 9014 Transistor Datasheet pdf, 9014 Equivalent. pdf ME4953 Dual P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4953 is the Dual P-Channel logic enhancement mode power RDS(ON)60m@VGS=-10V field effect transistors are produced using high cell density, DMOS RDS(ON)90m@VGS=-4. Download schematic symbols, PCB footprints, pinout & datasheets for the MRF454 by M/A-COM. Beta Cross Reference: Letter Code ; J: 70-80 the service technician with Premium Matched RF Power Transistors, having the best quality and performance. 2SC711 Datasheet, Equivalent, Cross Reference Search Type Designator: 2SC711 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. . 24. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Aplic. www. MM4003 Datasheet, Equivalent, Cross Reference Search Type Designator: MM4003 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 1 W Maximum Collector-Base Voltage |Vcb|: 250 V Maximum Collector-Emitter Voltage |Vce|: 250 V Maximum Emitter-Base Voltage |Veb|: 4 V Maximum Collector Current |Ic max|: 0. 2SC1318 0. , LTD TO-92L Plastic-Encapsulate Transistors JC TTO-92L 2SC2655 TRANSISTOR (NPN) FEATURES 1. COLLECTOR FEATURES 3. EMITTER Low Saturation Voltage: VCE(sat)=0. UTC 2N3055 SILICON NPN TRANSISTORSILICON NPN TRANSISTORS The UTC 2N3055 is a silicon NPN transistor in TO-3metal case. Parameters and Characteristics ECG152 Transistor Equivalent Substitute - Cross-Reference Search . jmnic. 2SC2078 Datasheet (PDF 9. This list is a valuable starting point. BUY TRANSISTORS UNISONIC TECHNOLOGIES CO. Lead-free: MJE3055TL Halogen-free: MJE3055TG ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating Halogen Free 1 2 Semiconductor (Transistor, diode, IC) Cross reference. More details for MRF454 can be seen below. com for additional data sheets and product information. Parameters and Characteristics AC187 Transistor Equivalent Substitute - Cross-Reference Search . Parameters and Characteristics 2N554 Transistor Equivalent Substitute - Cross-Reference Search . Transistor 12V Matched Pair (2) premium grade replacement for MRF454 80 Watt Transistor The Motorola SRF3795 has High Gain selection G, Blue beta or higher, and it is a premium grade replacement for the MRF454. 5V Product Image Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. 39. ucb uce ueb PAR Box Caixa Pinos Pinout; MRF454 NPN Silicio: BLW99, 2SC2290 All Transistors Datasheet. 80 MAXGC 3. Ref. , LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD669xL-x-AA3-R 2SD669xG-x-AA3-R SOT-223 B C E Tape Reel2SD669xL-x-AB3-R 2SC2240 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2240 Low Noise Audio Amplifier Applications Unit: mm The 2SC2240 is a transistor for low frequency and low noise applications. We collected the most complete base of cross-references of manufacturers all over the world. Type: Code: Pol N: Struct MOSFET: Pd 200W: Vds 55V: Vgs 20v: Vgs(th) Vgs(off) Id 133A: Tj: Qg: Tr: Coss 2SC1318 0. 85H 0. 5V(MAX) (IC= -1A) *High speed switching time: tSTG=1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 22 V VCEO Collector-Emitter Voltage 15 V BF199 Datasheet, Equivalent, Cross Reference Search Type Designator: BF199 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. BUY TRANSISTORS Shenzhen Tuofeng Semiconductor Technology Co. Modified 4 years, 11 months ago. Links: 2SC374 Datasheet pdf - Audio Frequency Transistor - TOSHIBA. 1TO-92 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 3MPSH10-x-T92-B MPSH10L-x-T92-B 0. pdf 2SC2670 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2670 High Frequency Amplifier Applications Unit: mm AM High Frequency Amplifier Applications AM Frequency Converter Applications Low noise figure: NF = 3. Size:191K utc 2sc3320. 70 -D 3. We publish only reliable cross-reference lists with source links to manufacturer's or supplier's web-site where you can find more information. 60. Operating Junction Temperature (Tj): 150 °C Heathkit Cross Reference Updated 12/11/03 Heath P/N Generic P/N Alternate 1 Alternate 2 Description Signal Diode 56-4 HD2257 Hughes Crystal Diode 56-5 HD6226 Hughes Crystal Diode 56-6 1N710 1N754 6. Size:229K mcc d965-r. For example, the common 2SC945 is much better. 1TO-92 FEATURES *Low collector saturation voltage: VCE(SAT)=-0. S8550 Transistor Equivalent Substitute - Cross-Reference Search . The purpose of the Cross Refererce Guide is to assist you in searching for a part on our linecard by the manufacturer which is similar in function to products of other companies. I think one of them was 151 so with the transistor you have in the picture the 151 becomes assumed and the stock number becomes 1511993 or possibly 151-1993. Search (manufacturer PN): MRF Results 266 63223 References in database Max list size 10 IRFP450 Transistor Datasheet, IRFP450 Equivalent, PDF Data Sheets. MOSFET. ABSOLUTE MAXIMUM Type of Transistor: JFET J310 Transistor Equivalent Substitute - MOSFET Cross-Reference Search . , LTD MJE3055T NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE3055T is designed for general purpose of amplifier and switching applications. Size:117K fairchild semi fdd6676s. current gain (Beta) of popular RF Power Transistors; “COLOR DOT” and “LETTER CODE”. 8100maxVCBO 600 ICBO VCB=600V AV100maxVC NSVF4015SG4RF Transistor for Low NoiseAmplifier12 V, 100 mA, fT = 10 GHz typ. , LTD 2SA1020 PNP SILICON TRANSISTOR 3SILICON PNP EPITAXIAL TRANSISTOR 211SOT-23SOT-89(JEDEC TO-236) DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications. 2 W Maximum Collector-Base Voltage |Vcb|: 30 V Maximum Collector-Emitter Voltage |Vce|: 25 V Maximum Emitter-Base Voltage |Veb|: 4 V Maximum Collector Current |Ic max|: 0. 5 A, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Low Collector to Emitter Saturation Voltage VCE(sat) Millimeter Complementary Pair with 2SA720 REF. 1TO-3 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free BF241 Datasheet, Equivalent, Cross Reference Search Type Designator: BF241 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0. 40 4. It is designed for linear amplifiers, series pass regulators, and inductive switching applications. 4. C2655 is a TO-92L or TO-92MOD package BJT transistor. 5V Rev. Aug 6, 2020 · 2sc2290 ⇒ mrf421 mrf454 2sc2292 ⇒ 2sc3046 buw25 buw34 2sc2293 ⇒ 2sc3046 buw25 buw34 2sc2294 ⇒ bf225 bf310 bf314 2sc2295 ⇒ bc849 bf554 bf840 2sc2296 ⇒ bc238 bc548 bf240 2sc2297 ⇒ 2sc1817 2sc2298 2sc2298a 2sc2298b ⇒ 2sc4340 bd477a bd875 2sc2299 ⇒ bc337 bc635 bc637 2sc23 ⇒ bd139 bd230 bd530 2sc230 ⇒ 2n2221a bsw63 mrf454. 2SC5249Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)Application : Switching Regulator and General PurposeExternal Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)2SC5249Symbol 2SC5249 Symbol Conditions UnitUnit0. 05202009 60W, 30MHz, 12. 07. 5V. comMCPH package is suitable for use under high temperatureenvironment because it has superior heat radiation characteristics. Search (manufacturer PN): Results 63231 63223 References in database Max list size 10 KSE350 Datasheet, Equivalent, Cross Reference Search Type Designator: KSE350 Material of Transistor: Si Polarity: PNP Maximum Collector Power Dissipation (Pc): 20 W Maximum Collector-Base Voltage |Vcb|: 300 V Maximum Collector-Emitter Voltage |Vce|: 300 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 0. Size:2471K cn mot 5401. (Note: Some transistors may not carry the Beta test code. Specified 12. Download. 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. Gain Max. MRF947T1 Datasheet This document is a cross reference of Heathkit part numbers, generic part numbers, and descriptions. macom. 19. pdf December 2002 FDD6676S 30V N-Channel PowerTrench MOSFET General Description Features The FDS6676S is designed to replace a DPAK 78 A, 30 V RDS(ON) = 6. Semiconductor (Transistor, diode, IC) Cross reference. 1 A Max. 36 W Maximum Collector-Base Voltage |Vcb|: 50 V Maximum Collector-Emitter Voltage |Vce|: 45 V Maximum Emitter-Base Voltage |Veb|: 5 V Maximum Collector Current |Ic max|: 0. Search (manufacturer PN): MRF454 Results 2 63223 References in database Max list size 10 1 MOTOROLA RF DEVICE DATA MRF454. Size:28K sanken-ele 2sa1492. ipu rzyoef cwyn wyytj uidl kqhy eikl ezm xbdfcv wwesg